K and Au bicatalyst assisted growth of carbon nanocoils from acetylene: effect of deposition parameters on field emission properties.
نویسندگان
چکیده
We demonstrated the growth of carbon nanocoils (CNCs) via chemical vapor deposition (CVD) using Au and K metals as the catalysts to assist the thermal decomposition of C(2)H(2). Typical CNCs (wire diameter: 50-80 nm, coil diameter: 110-140 nm, pitch: 100-200 nm, tens of micrometers), identified as amorphous coiled carbon fibers by scanning electron microscopy (SEM) and transmission electron microscopy (TEM), were grown at proper combinations of reaction parameters. Au nanoparticles (NPs), identified by energy dispersion X-ray spectroscopy (EDX) and electron diffraction (ED), were located at the tips of the CNCs. The observations suggested that a tip-growth mechanism involving the Au NPs as the nucleation sites was in operation. In the reaction, the liquid-phase K metal assisted the decomposition of C(2)H(2) by lowering the reaction temperature. We propose that acetylide and hydride intermediates were formed in the reaction. Further decomposition of the acetylide intermediates generated solid-phase carbon to grow the CNCs. Effects of varying the reaction conditions on the CNC growth were investigated. On the basis of the results, a Au and K bicatalyst enhanced tip-growth vapor-liquid-solid (VLS) mechanism was proposed to rationalize the CNC formation process. Electron field emission (EFE) characteristics of the CNCs were studied. The best EFE result showed a turn-on field (E(to)) of 3.78 V/μm and a field enhancement factor (β) of 1852. In addition, the current density (J) was as high as 43 mA/cm(2) at 6.87 V/μm. The data suggest that the CNCs could be employed for field emission device applications.
منابع مشابه
Growth of carbon nanocoils from K and Ag cooperative bicatalyst assisted thermal decomposition of acetylene.
Growth of amorphous carbon nanocoil (CNC) from acetylene on Si substrates was achieved by using nanosized Ag and K as the catalysts. The deposition of CNC was carried out inside a hot-wall reactor at 723 K using H2 as the carrier gas. Based on the observed results, we propose a cooperative bimetal catalyst enhanced vapor-liquid-solid (VLS) growth mechanism to rationalize the CNC growth. In the ...
متن کاملEvaluation of the Effect of Ni-Co NPs for the Effective Growth of Carbon Nanotubes by TCVD System
A systematic study was conducted to understand the influences of catalyst combination as Ni-Co NPs on carbon nanotubes (CNTs) grown by Chemical Vapor Deposition (TCVD). The DC-sputtering system was used to prepare Co and Ni-Co thin films on silicon substrate. Ni- Co nanoparticles were used as metal catalyst for growing carbon nanotubes from acetylene (C2H2) gas in 850 ̊ C during 15 min. Carb...
متن کاملGrowth of CNTs over Fe–Co/Nanometric TiO2 Catalyst by CVD: The Effects of Catalyst Composition and Growth Temperature
In this research carbon nanotubes were produced by chemical vapor deposition of acetylene over a mixture of iron and cobalt catalysts supported on nanometric TiO2 and the influences of two synthesis parameters: growth temperature and catalyst composition ratio on properties of end-product carbon nanotubes were investigated. The catalytic basis was prepared by wet impregnation ...
متن کاملRole of growth temperature in CVD synthesis of Carbon nanotubes from Ni-Co bimetallic catalysts
The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...
متن کاملRole of growth temperature in CVD synthesis of Carbon nanotubes from Ni-Co bimetallic catalysts
The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- ACS applied materials & interfaces
دوره 4 12 شماره
صفحات -
تاریخ انتشار 2012